من إجابة واحدة ان المعادن تتمدد بالحرارة بحيث يصبح طولها اكبر وهذا هو التمدد الطولي ويوجد كذلك التمدد السطحي والتمدد الحجمي ولكن في الغالب يستعمل فقط التمدد الطولي للمواد الصلبة ومنها الحديد ولكل معدن يوجد معامل
The real breakthrough in high voltage switching Based on the advanced and innovative properties of wide bandgap materials ST s STPOWER SiC MOSFETs feature very low …
Features Automotive-grade (AG) qualified devices Very high-temperature handling capability (max TJ = °C) Very low switching losses (minimal variation versus temperature) …
SCTN STMicroelectronics N-Channel V mΩ A Flange Mount Silicon Carbide Power Mosfet - HiP As Low As $ (USD) SCTN …
GaN Imaging Premium Foundry SiC Silicon carbide for a more sustainable future STMicroelectronics introduced its first SiC diodes in after several years of research …
Show only products supplied by ST on off SCTWNGAG Automotive-grade silicon carbide Power MOSFET V A mOhm (typ TJ = C) in an HiP package …
Oct · October ET Source STMicroelectronics N V STMicroelectronics to build integrated Silicon Carbide substrate manufacturing facility in …
Features Automotive-grade (AG) qualified devices Very high-temperature handling capability (max TJ = °C) Very low switching losses (minimal variation versus temperature) …
The latest breakthrough in high-voltage switching and rectification STMicroelectronics Silicon Carbide (SiC) MOSFETs include V SiC MOSFETs featuring the …
Apr · ST SiC MOSFETs allow the design of more efficient and compact systems ST s V SiC MOSFETs exhibit an outstanding temperature rating of °C for …